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This is for one 2N3390 NOS silicon NPN transistor. I believe the mfg is GE. Low noise, high gain amplifier. It cross references to NTE199. The NTE199 is a silicon NPN transistor in a TO92 type package designed especially for low noise preamplifier and small signal industrial amplifier applications. This device features low collector saturation voltage, tight beta control, and excellent low noise characteristics. (TA = +25 C unless otherwise specified) CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V CBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V EBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Steady State Collector Current (Note 1), I C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA A = +25 C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/ C A = +55 C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260mW Operating Junction Temperature Range, T J . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +125 C stg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150 C Lead Temperature (During Soldering, 1/16 from case, 10sec max), T L . . . . . . . . . . . . . . . . . +260 C (2N3390 nos npn transistor low noise high gain amplifier was posted and is owned by: Lauri Hahn) |
lauri-hahn@chicagopartsnetwork.com (Lauri Hahn) for more information.
